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NTGD3147F
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
? 20
14.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 16 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ? 250 m A
? 0.5
? 0.95
? 1.5
V
Gate Threshold Temperature Coefficient
V GS(TH) /T J
3.0
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V
V GS = ? 2.5 V
I D = ? 2.2 A
I D = ? 1.6 A
90
140
145
200
m W
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 2.2 A
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ? 10 V
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 2.2 A
400
75
40
3.8
0.5
0.9
1.0
5.5
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
7.5
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 1.0 A, R G = 6.0 W
6.2
14.5
18.4
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = ? 0.8 A
T J = 25 ° C
? 0.8
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = ? 0.8 A
12
8.0
4.0
4.0
ns
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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